IRF3710-100 V / 57 Amp N-Channel Power MOSFET by IR

Description:

IRF3710 is Advanced Power MOSFET that utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Features:

• Advanced process technology

• Ultra-low on-resistance

• Dynamic dv/dt rating

• Fast switching

• Fully avalanche rated

Specifications:

• Number of Channels 1 Channel

• Transistor Polarity N-Channel

• Drain-Source Breakdown Voltage (Vds) 100V

• Continuous Drain Current (Id) 57A

• Drain-Source Resistance (Rds On) 23mOhms

• Gate-Source Voltage (Vgs) 20V

• Gate Charge (Qg) 130 nC

• Operating Temperature Range -55 - 175°C

• Power Dissipation (Pd) 200W

Package Include:

• 1 X IRF3710-100 V / 57 Amp N-Channel Power MOSFET by IR