IRF3710-100 V / 57 Amp N-Channel Power MOSFET by IR
SKU: 11042
1) Advanced process technology
2) Ultra low on-resistance
3) Operating Temperature Range -55 - 175°C
4) Fully avalanche rated
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Description:
IRF3710 is Advanced Power MOSFET that utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Features:
Advanced process technology
Ultra-low on-resistance
Dynamic dv/dt rating
Fast switching
Fully avalanche rated
Specifications:
Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 100V
Continuous Drain Current (Id) 57A
Drain-Source Resistance (Rds On) 23mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 130 nC
Operating Temperature Range -55 - 175°C
Power Dissipation (Pd) 200W
Package Include:
1 X IRF3710-100 V / 57 Amp N-Channel Power MOSFET by IR